bzx55 series vishay semiconductors formerly general semiconductor document number 88319 www.vishay.com 26-apr-02 1 zener diodes v z range 0.8, 2.4 to 100v power dissipation 500mw features ?silicon planar power zener diodes. ? the zener voltages are graded according to the international e 24 standard. standard zener voltage tolerance is 5%. replace suffix ? with ? for 2% tolerance. other voltage tolerances and other zener voltages are available upon request. mechanical data case: do-35 glass case weight: approx. 0.13g packaging codes/options: d7/10k per 13 reel (52mm tape), 20k/box d8/10k per ammo tape (52mm tape), 20k/box do-204ah (do-35 glass) dimensions in inches and (millimeters) maximum ratings and thermal characteristics (t a = 25 c unless otherwise noted) parameter symbol value unit zener current (see table characteristics ) power dissipation at t amb = 25 cp tot 500 (1) mw thermal resistance junction to ambient air r ja 300 (1) c/w junction temperature t j 175 c storage temperature range t s 55 to +175 c note: (1) valid provided that leads at a distance of 3/8 from case are kept at ambient temperature. extended voltage range
bzx55 series vishay semiconductors formerly general semiconductor www.vishay.com document number 88319 2 26-apr-02 electrical characteristics (t a = 25 c unless otherwise noted) maximum v f = 1.0 v at i f = 100 ma bzx55 y0v8 (3) < 8 < 600 0.25 bzx55 y2v4 < 85 < 600 0.08 0.06 < 50000 < 100 1 145 bzx55 y2v7 < 85 < 600 0.08 0.06 < 10000 < 50 1 135 bzx55 y3v0 < 85 < 600 0.08 0.06 < 4000 < 40 1 125 bzx55 y3v3 < 85 < 600 0.08 0.05 < 2000 < 40 1 115 bzx55 y3v6 < 85 < 600 0.08 0.04 < 2000 < 40 1 105 bzx55 y3v9 < 85 < 600 0.07 0.03 < 2000 < 40 1 95 bzx55 y4v3 < 75 < 600 0.04 0.01 < 1000 < 20 1 90 bzx55 y4v7 < 60 < 600 0.03 +0.01 < 500 < 10 1 85 bzx55 y5v1 < 35 < 550 0.02 +0.05 < 100 < 2 1 80 bzx55 y5v6 < 25 < 450 0.01 +0.06 < 100 < 2 1 70 bzx55 y6v2 < 10 < 200 0 +0.07 < 100 < 2 2 64 bzx55 y6v8 < 8 < 150 +0.01 +0.08 < 100 < 2 3 58 bzx55 y7v5 < 7 < 50 +0.01 +0.09 < 100 < 2 5 53 bzx55 y8v2 < 7 < 50 +0.01 +0.09 < 100 < 2 6.2 47 bzx55 y9v1 < 10 < 50 +0.02 +0.10 < 100 < 2 6.8 43 bzx55 y10 < 15 < 70 +0.03 +0.11 < 100 < 2 7.5 40 bzx55 y11 < 20 < 70 +0.03 +0.11 < 100 < 2 8.2 36 bzx55 y12 < 20 < 90 +0.03 +0.11 < 100 < 2 9.1 32 bzx55 y13 < 26 < 110 +0.03 +0.11 < 100 < 2 10 29 bzx55 y15 < 30 < 110 +0.03 +0.11 < 100 < 2 11 27 bzx55 y16 < 40 < 170 +0.03 +0.11 < 100 < 2 12 24 bzx55 y18 < 50 < 170 +0.03 +0.11 < 100 < 2 13 21 bzx55 y20 < 55 < 220 +0.03 +0.11 < 100 < 2 15 20 bzx55 y22 < 55 < 220 +0.03 +0.11 < 100 < 2 16 18 bzx55 y24 < 80 < 220 +0.04 +0.12 < 100 < 2 18 16 bzx55 y27 < 80 < 220 +0.04 +0.12 < 100 < 2 20 14 bzx55 y30 < 80 < 220 +0.04 +0.12 < 100 < 2 22 13 bzx55 y33 < 80 < 220 +0.04 +0.12 < 100 < 2 24 12 bzx55 y36 < 80 < 220 +0.04 +0.12 < 100 < 2 27 11 bzx55 y39 < 90 (4) < 500 (5) +0.04 +0.12 < 100 < 5 30 10 bzx55 y43 < 90 (4) < 600 (5) +0.04 +0.12 < 100 < 5 33 9.2 bzx55 y47 < 110 (4) < 700 (5) +0.04 +0.12 < 100 < 5 36 8.5 bzx55 y51 < 125 (4) < 700 (5) +0.04 +0.12 < 100 < 10 39 7.8 bzx55 y56 < 135 (4) < 1000 (5) typ. +0.1 (4) < 100 < 10 43 7.0 bzx55 y62 < 150 (4) < 1000 (5) typ. +0.1 (4) < 100 < 10 47 6.4 bzx55 y68 < 200 (4) < 1000 (5) typ. +0.1 (4) < 100 < 10 51 5.9 bzx55 y75 < 250 (4) < 1500 (5) typ. +0.1 (4) < 100 < 10 56 5.3 bzx55 - y82 < 300 (4) < 2000 (5) typ. +0.1 (4) < 100 < 10 62 4.8 bzx55 - y91 < 450 (6) < 5000 (7) typ. +0.1 (4) < 100 < 10 68 4.4 bzx55 - y100 < 450 (6) < 5000 (7) typ. +0.1 (4) < 100 < 10 75 4.0 notes: (1) tested with pulses t p = 5 ms (2) valid provided that leads are kept at ambient temperature at a distance of 8 mm from case (3) the bzx55 c0v8 is a silicon diode with operation in forward direction. hence, the index of all parameters should be f instead of z . connect the cathode lead to the negative pole. (4) at i z = 2.5 ma (5) at i z = 0.5 ma (6) at iz = 1.0 ma (7) at iz = 0.1 ma type y = c for 5% y = b for 2% at i z = 5 ma f = 1 khz rzj ( ? ) dynamic resistance temp. coefficient of zener voltage at i z = 5 ma vz (%/?) at i z = 1ma f = 1 khz rzj ( ? ) min max at v r (v) admissible zener current (2) i zm (ma) reverse leakage current at t amb = 150? i r ( a) at t amb = 25 c i r (na)
bzx55 series vishay semiconductors formerly general semiconductor document number 88319 www.vishay.com 26-apr-02 3 type 2% tol. bzx55-b0v8 (3) 0.78 0.82 5.0 bzx55-b2v7 2.35 2.45 5.0 bzx55-b3 2.65 2.75 5.0 bzx55-b3v0 2.94 3.06 5.0 bzx55-b3v3 3.23 3.37 5.0 bzx55-b3v6 3.53 3.67 5.0 bzx55-b3v9 3.82 3.98 5.0 bzx55-b4v3 4.21 4.39 5.0 bzx55-b4v7 4.61 4.79 5.0 bzx55-b5v1 5.00 5.20 5.0 bzx55-b5v6 5.49 5.71 5.0 bzx55-b6v2 6.08 6.32 5.0 bzx55-b6v8 6.66 6.94 5.0 bzx55-b7v5 7.35 7.65 5.0 bzx55-b8v2 8.04 8.36 5.0 bzx55-b9v1 8.92 9.28 5.0 bzx55-b10 9.80 10.2 5.0 bzx55-b11 10.8 11.2 5.0 bzx55-b12 11.8 12.2 5.0 bzx55-b13 12.7 13.3 5.0 bzx55-b15 14.7 15.3 5.0 bzx55-b16 15.7 16.3 5.0 bzx55-b18 17.6 18.4 5.0 bzx55-b20 19.6 20.4 5.0 bzx55-b22 21.6 22.4 5.0 bzx55-b24 23.5 24.5 5.0 bzx55-b27 26.5 27.5 5.0 bzx55-b30 29.4 30.6 5.0 bzx55-b33 32.3 33.7 5.0 bzx55-b36 35.3 36.7 5.0 bzx55-b39 38.2 39.8 2.5 bzx55-b43 42.1 43.9 2.5 bzx55-b47 46.1 47.9 2.5 bzx55-b51 50.0 52.0 2.5 bzx55-b56 54.9 57.1 2.5 bzx55-b62 60.8 63.2 2.5 bzx55-b68 66.6 69.4 2.5 bzx55-b75 73.5 76.5 2.5 bzx55-b82 80.4 83.6 2.5 bzx55-b91 89.2 92.8 1.0 bzx55-b100 98.0 102 1.0 type 5% tol. zener voltage range (1) at i zt1 v z (v) min. max. test current i zt1 (ma) zener voltage range (1) at i zt1 v z (v) min. max. test current i zt1 (ma) electrical characteristics (t a = 25 c unless otherwise noted) maximum v f = 1.0v at i f = 100 ma bzx55-c0v8 (3) 0.73 0.83 5.0 bzx55-c2v4 2.28 2.56 5.0 bzx55-c2v7 2.50 2.90 5.0 bzx55-c3v0 2.80 3.20 5.0 bzx55-c3v3 3.10 3.50 5.0 bzx55-c3v6 3.40 3.90 5.0 bzx55-c3v9 3.70 4.10 5.0 bzx55-c4v3 4.00 4.60 5.0 bzx55-c4v7 4.40 5.00 5.0 bzx55-c5v1 4.80 5.40 5.0 bzx55-c5v6 5.20 6.00 5.0 bzx55-c6v2 5.80 6.60 5.0 bzx55-c6v8 6.40 7.20 5.0 bzx55-c7v5 7.00 7.90 5.0 bzx55-c8v2 7.70 8.70 5.0 bzx55-c9v1 8.50 9.60 5.0 bzx55-c10 9.40 10.6 5.0 bzx55-c11 10.4 11.6 5.0 bzx55-c12 11.4 12.7 5.0 bzx55-c13 12.4 14.1 5.0 bzx55-c15 13.8 15.6 5.0 bzx55-c16 15.3 17.1 5.0 bzx55-c18 16.8 19.1 5.0 bzx55-c20 18.8 21.2 5.0 bzx55-c22 20.8 23.3 5.0 bzx55-c24 22.8 25.6 5.0 bzx55-c27 25.1 28.9 5.0 bzx55-c30 28.0 32.0 5.0 bzx55-c33 31.0 35.0 5.0 bzx55-c36 34.0 38.0 5.0 bzx55-c39 37.0 41.0 2.5 bzx55-c43 40.0 46.0 2.5 bzx55-c47 44.0 50.0 2.5 bzx55-c51 48.0 54.0 2.5 bzx55-c56 52.0 60.0 2.5 bzx55-c62 58.0 66.0 2.5 bzx55-c68 64.0 72.0 2.5 bzx55-c75 70.0 80.0 2.5 BZX55-C82 77.0 87.0 2.5 bzx55-c91 85.0 96.0 1.0 bzx55-c100 94.0 106 1.0 notes: (1) measured with pulses t p = 5 ms (3) the bzx55 c0v8 is a silicon diode with operation in forward direction. hence, the index of all parameters should be f instead of z . connect the cathode lead to the negative pole.
bzx55 series vishay semiconductors formerly general semiconductor www.vishay.com document number 88319 4 26-apr-02 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bzx55 series vishay semiconductors formerly general semiconductor document number 88319 www.vishay.com 26-apr-02 5 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bzx55 series vishay semiconductors formerly general semiconductor www.vishay.com document number 88319 6 26-apr-02 ratings and characteristic curves (t a = 25 c unless otherwise noted)
bzx55 series vishay semiconductors formerly general semiconductor document number 88319 www.vishay.com 26-apr-02 7
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